A comparison of 48 MeV Li3+ ion, 100 MeV F8+ ion and Co-60 gamma irradiation effect on N-channel MOSFETs

作者：Pushpa N^*; Praveen K C; Prakash A P Gnana; Rao Y P Prabhakara; Tripati Ambuj; Govindaraj G; Revannasiddaiah D

来源：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2010, 613(2): 280-289.

DOI：10.1016/j.nima.2009.12.015

• Interface trapped charge
• Oxide trapped charge
• Threshold voltage
• Ion irradiation
• MOSFET
• Transconductance
• Mobility degradation

N-channel MOSFETs were irradiated by 48 MeV Li3+ ions, 100 MeV F8+ ions and Co-60 gamma radiation with doses ranging from 100krad to 100Mrad. The threshold voltage (V-TH), voltage shift due to interface trapped charge (Delta V-Nit), voltage shift due to oxide trapped charge (Delta V-Not), density of interface trapped charge (Delta N-it), density of oxide trapped charge (Delta N-ot), transconductance (g(m)), mobility (mu) of electrons in the channel and drain saturation current (I-D (Sat)) were studied as a function of dose. Considerable increase in Delta N-it and Delta N-ot, and decrease in V-TH, g(m) and I-D S-at were observed in all the irradiated devices. We correlated the degradation of mu with the Delta N-it and the effect of Delta N-ot is found to be negligible for degrading the mu. The maximum degradation was observed for the devices irradiated with Co-60 gamma radiation when compared with those irradiated with ions, since gamma radiation can generate more trapped charge in field oxide when compared to the high energy ions.

• 出版日期2010-2-1