An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

作者：Zhou Xingye^*; Che Yuchi; Zhang Lining; He Jin; Chan Mansun

来源：Nanotech 2009 Conference, 2009-05-03 to 2009-05-07.

In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics of the silicon-based nanowire Schottky barrier MOSFETs with different geometry and structure parameters and extensive comparisons with the 2-D numerical simulation show that the presented model is valid for all operation regions of such a device with a variety of geometry parameters and different work function configurations of the metal source (drain). Such a compact model may be useful for us to benchmark nanowire Schottky barrier MOSFET circuit performance and device structure optimization.

• 出版日期2009
• 单位北京大学深圳研究生院