摘要
Non-axisymmetric flexural vibrations of circular silicon (111) wafers are investigated. The modes with azimuthal index 2 <= k <= 30 are electrostatically excited and monitored by a capacitive sensor. The splitting of the mode frequencies associated with imperfection of the wafer is observed. The measured loss factors for the modes with 6 less than or similar to k less than or similar to 26 are close to those calculated according to the thermoelastic damping theory, while clamping losses likely dominate for k less than or similar to 6, and surface losses at the level of inverse Q-factor Q(-1) approximate to 4 x 10(-6) prevail for the modes with large k. The modes demonstrate nonlinear behavior of mainly geometrical origin at large amplitudes.
- 出版日期2014-2-7