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摘要
A analytical and explicit drain-current equation has been derived for undoped symmetric double-gate MOSFETs. This current equation is expressed clearly with surface potential and verified with numerical results both in the subthreshold and the saturation region. It facilitates the calculation of drain current if only the surface potential is known, which is suitable for compact model development.
- 出版日期2007-12-6
- 单位南阳理工学院
