AlN Passivation Layer-Mediated Improvement in Tensile Failure of Flexible ZnO:Al Thin Films

作者：Choi Hong Rak; Mohanty Bhaskar Chandra; Kim Jong Seong; Cho Yong Soo^*

来源：ACS Applied Materials & Interfaces, 2010, 2(9): 2471-2474.

DOI：10.1021/am100386s

• flexible electronics
• AlN passivation
• ZnO thin films
• crack density
• fracture energy

AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain epsilon(c) of only about 1.13% with a saturated crack density rho(s) of 0.10 mu m(-1) and a fracture energy Gamma of 49.6 J m(-2). On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a

• 出版日期2010-9