Memristor Effect in Sandwich-type Ni-TiOx-p/Si-Ni Heterojunction

作者：Kostiukevych Oleksandr M^*; Skryshevsky Valeriy A; Lendiel Vasyl V; Shulimov Yuriy G; Manilov Anton I; Lushkin Oleksandr Ye

来源：Journal of Nano Research, 2016, 39: 114-+.

DOI：10.4028/www.scientific.net/JNanoR.39.114

• titanium dioxide
• memristor
• non-volatile memory
• hysteresis
• surface states
• current-voltage characteristics
• capacitance-voltage characteristics

I-V, C-V characteristics and current change kinetics of the Ni-TiOx-p/Si-Ni heterojunction were studied at different speeds of voltage sweep, in darkness and under illumination in various spectral regions. It was found that Ni-TiOx-p/Si-Ni heterojunction shows a pronounced hysteretic behavior and can act as a memristor cell. Results of studies of photosensitivity and current kinetics under abrupt changes of the applied voltage and illumination reveal a considerable role of surface states recharging in TiOx oxide layer or at TiOx-p/Si interface in the switching effects. The studied Ni-TiOx-p/Si-Ni heterostructure is prospective as a basis for low-cost, CMOS- and SOI-compatible microelectronic devices with non-volatile memory.

• 出版日期2016