A 20-V CMOS-based monolithic bidirectional power switch

作者：Fu Y.^*; Cheng X.; Chen Y.; Liou J. J.; Shen Z. J.

来源：IEEE Electron Device Letters, 2007, 28(2): 174-176.

DOI：10.1109/LED.2006.889509

• battery protection circuitry
• bidirectional switch
• on-resistance
• power MOSFET

Bidirectional power-switching devices are needed in many power-management applications, particularly in lithium-ion battery protection circuitry. In this letter, a monolithic planar bidirectional power switch fabricated with a simplified CMOS technology is introduced. The new four-terminal device provides a blocking voltage greater than 20 V and a low on-resistance in either direction between its two power terminals. Detailed device characterization and analysis reveal that the new device structure has good latch-up immunity even though it comprises several p-n junctions in close proximity. This new CMOS-compatible power switch can be used in discrete form or as part of a power IC.

• 出版日期2007-2