Application Possibility of Mn0.04Cu0.05Zn0.91O in Electronic and Magnetic Devices

作者：Datta Joydeep; Dey Arka; Neogi Swarup K; Das Mrinmay; Middya Somnath; Jana Rajkumar; Bandyopadhyay Sudipta; Layek Animesh; Ray Partha Pratim^*

来源：IEEE Transactions on Electron Devices, 2017, 64(11): 4724-4730.

DOI：10.1109/TED.2017.2754190

• Current-voltage (I-V) characteristics
• magnetic semiconductors
• magnetic susceptibility
• magnetization
• nanostructured materials
• Schottky diodes
• thin films

In this literature, we have investigated the magnetic properties and Schottky device-based charge transport properties of hydrothermally derived Mn0.04Cu0.05Zn0.91O nanorod. The doping of 3-D transitional metals, Mn and Cu, within ZnO makes it potentially applicable in spin-based electronics, whereas its temperature-dependent conductivity (of the order of 10(-3) in C.G.S.) makes it suitable for semiconductor-based devices. The observation of intrinsic ferromagnetism of the synthesized composite and its variation of magnetization with magnetic field and temperature exhibited the suitability of spin-based electronic application. To check the applicability in optoelectronic devices, metal-semiconductor (Al/Mn0.04Cu0.05Zn0.91O) junction was fabricated and analyzed. The current-voltage characteristic represented the rectifying behavior of the junction with on/off current ratio 4.3 at +/- 1 V in dark and potential barrier height 0.61 eV. The significant change in rectification due to the influence of incident radiation makes this material suitable for photosensing electronic device application.

• 出版日期2017-11