AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices

作者：Alyoruk M M^*; Ergun Y; Hostut M

来源：Opto-electronics Review, 2015, 23(1): 24-27.

DOI：10.1515/oere-2015-0001

• InAs/AlSb/GaSb type-II SL structure
• HH-LH splitting
• N-structure
• DFT
• layer thickness effect

This study is based on the investigation of AlSb layer thickness effect on heavy-hole light-hole (HH-LH) splitting and band gap energies in a recently developed N-structure based on InAs/AlSb/GaSb type II superlattice (T2SL) p-i-n photodetector. eFirst principle calculations were carried out tailoring the band gap and HH-LH splitting energies for two possible interface transition alloys of InSb and AlAs between InAs and AlSb interfaces in the superlattice. Results show that AlSb and InAs-GaSb layer thicknesses enable to control HH-LH splitting energies to desired values for Auger recombination process where AlSb/GaSb total layer thickness is equal to InAs layers for the structures with InSb and AlAs interfaces.

• 出版日期2015-3