Differential-read 8T SRAM cell with tunable access and pull-down transistors

作者：Wen, Liang^*; Li, Zhentao; Li, Yong

来源：Electronics Letters, 2012, 48(20): 1256-+.

DOI：10.1049/el.2012.2612

A novel 8T SRAM cell with high stability and write speed is proposed. The tunable access transistors and pull-down transistors are used to favour the desired operations. During a write operation, the strength of access transistors is enhanced, resulting in improving noise-immunity and write speed. The strength of pull-down transistors is enhanced during the read operation, hence exhibiting a high noise tolerance. The experimental results show that the proposed 8T cell can provide approximately 1.28x improvement in read static noise margin (SNM) and 1.10x improvement in write SNM compared to the standard 6T cell at 0.9V in 65nm process. Moreover, it also achieves 1.52x faster write speed and higher process variation tolerance.

• 出版日期2012-9-27
• 单位中国人民解放军国防科学技术大学