Wavelength selective switching in dilute nitrides multi quantum well photonic band gap waveguides

作者：Calo Giovanna^*; Alexandropoulos Dimitris; D'Orazio Antonella; Petruzzelli Vincenzo

来源：Physica Status Solidi (B) Basic Research, 2011, 248(5): 1212-1215.

DOI：10.1002/pssb.201000782

• dilute nitrides
• optical switching devices
• photonic crystals

The analysis of the gain behaviour in active GaInNAs-GaInAs Photonic Band Gap (PBG) ridge waveguides is reported. The analysis is performed using proprietary codes, based on the Bidirectional Beam Propagation Method with the Method of Lines, introducing the rate equations. The bandstructure of the active material is modelled using the k . p theory for the valence band mixing effects and the band anticrossing model for the conduction band. A wavelength selective switch configuration is proposed exploiting a periodic grating patterned on a ridge waveguide in which an active defect is inserted. The presence of the active defect allows the localization of states and the transmission of the optical signal within the PBG. The wavelength selective switching mechanism stems from the possibility of shifting the wavelength of the localized state by properly choosing the defect length and the injected current density. From the numerical analysis, the proposed device exhibits, at the switching wavelength lambda(B) = 1.289 mu m, good values of the crosstalk CT = -11.55 dB, the contrast ratio CR = 14.29 dB, the modulation depth MD = 0.93, and the bandwidth Delta lambda = 0.8 nm.

• 出版日期2011-5