Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

作者：Tsao, S W; Chang, T C^*; Huang, S Y; Chen, M C; Chen, S C; Tsai, C T; Kuo, Y J; Chen, Y C; Wu, W C

来源：Solid-State Electronics, 2010, 54(12): 1497-1499.

DOI：10.1016/j.sse.2010.08.001

• Indium-gallium-zinc oxide
• Thin film transistor
• Hydrogen

This study investigates the effect of hydrogen incorporation on amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) The threshold voltage (V-th) and subthreshold swing (SS) of hydro gen-incorporated a-IGZO TFTs were improved and the threshold voltage shift (Delta V-th) in hysteresis loop was also suppressed from 4 V to 2 V The physical property and chemical composition of a-IGZO films were analyzed by X ray diffraction and X ray photoelectron spectroscopy respectively Experimental results

• 出版日期2010-12
• 单位中山大学