AlGaN membrane grating reflector

作者：Kim Jaehoon^*; Kim Dong Uk; Lee Joonhee; Jeon Heonsu; Park Yeonsang; Choi Y S

来源：Applied Physics Letters, 2009, 95(2): 021102.

DOI：10.1063/1.3168552

• aluminium compounds
• diffraction gratings
• etching
• gallium compounds
• holography
• III-V semiconductors
• optical fabrication
• photoelectrochemistry
• photolithography
• reflectometry
• visible spectra
• wide band gap semiconductors

We report on AlGaN grating reflectors for short-wavelength applications, an alternative to conventional distributed Bragg reflectors that are difficult to make in a GaN-based system. An array of air-bridge AlGaN grating reflectors, with a period and filling factor of 430 nm and 0.55, was fabricated through holographic lithography and photoelectrochemical etching. Polarization-dependent microreflectance spectra were measured to confirm their consistency with simulation results. The reflectance measured at 532 nm for transverse-electric polarization was as high as similar to 90%. We also found that the spectral range for high reflection correlates with the photonic Bloch band-edge modes.

• 出版日期2009-7-13