A review on photocatalytic application of g-C3N4/semiconductor (CNS) nanocomposites towards the erasure of dyeing wastewater

作者：Lam Sze Mun; Sin Jin Chung; Mohamed Abdul Rahman

来源：Materials Science in Semiconductor Processing, 2016, 47: 62-84.

DOI：10.1016/j.mssp.2016.02.019

• Graphitic carbon nitride
• Semiconductor
• Photocatalysis
• Nanocomposite
• Dye

Widespread concerns about the impacts of exposure to chemical substances with textile dyeing activities continue to be raised. Hitherto, the percolation of synthetic colourants into the groundwater and surface water supply remains an intricate challenge abroad the nations. With the revolution of graphitic carbon nitride (g-C3N4), there has been a gradually increasing attention in this research area. Recent advancements have been demonstrated that g-C3N4/semiconductor (CNS) nanocomposites can be envisioned as the most privileged and promising novel catalysts in the photocatalytic destruction of industrial effluents. The paper presents a review of current state of art on photocatalytic destruction of dyestuff effluents via CNS nanocomposites. Numerous techniques used to synthesize the CNS nanocomposites together with their representative examples have been reviewed. In addition, the recent research progresses on the efficacy of these nanocomposites in removing of selected dye pollutants are also summarized. This review paper ends with a summary and several future prospects on the challenges in expanding g-C3N4-based advanced nanocomposites in the possible enhancement of environmental conservation.

• 出版日期2016-6-1