pMOSFET Performance Enhancement With Strained Si1-xGex Channels

作者：Ho Byron^*; Xu Nuo; Liu Tsu Jae King

来源：IEEE Transactions on Electron Devices, 2012, 59(5): 1468-1474.

DOI：10.1109/TED.2012.2186576

• Mobility
• p-channel MOSFETs (pMOSFETs)
• silicon-germanium
• strain

The inversion-layer hole mobility in MOSFETs with thin silicon-germanium (Si1-xGex) channels grown pseudomorphically on Si is calculated using a self-consistent 6 x 6 k . p Poisson-Schrodinger mobility simulator calibrated to experimental and simulation data. The addition of uniaxial compressive stress to the inherent biaxial compressive strain of the pseudomorphic Si1-xGex layer is found to further enhance hole mobility by up to 2.5x. Two-dimensional device simulations are used to assess the benefit of the Si1-xGex heterostructure channel for boosting the ON-state current (I-on) of p-channel MOSFETs with a gate length (L-g) of 18 nm; the results show a moderate (10%-40%) improvement over a bulk-Si MOSFET.

• 出版日期2012-5