An accurate compact model for CMOS cross-shaped Hall effect sensors

作者：Madec M^*; Kammerer J B; Hebrard L; Lallement C

来源：Sensors and Actuators A: Physical , 2011, 171(2): 69-78.

DOI：10.1016/j.sna.2011.05.027

• Compact model
• Magnetic sensor
• Hall effect device
• Integrated sensor
• CMOS
• Verilog-A

The paper describes a new design-oriented compact model for horizontal Hall effect devices. This model is based on the physics of semi-conductor and is simplified according to some assumptions verified through experimental results and/or numerical simulations. Compared to existing models, it has the advantage to take most of the first-order effects into account while allowing fast simulations. A procedure to extract the parameters of the model is given and simulation results are compared to experimental data measured on a cross-shaped sensor designed in a standard 0.35 mu m CMOS technology. The maximum error between simulation results and experimental data is less than 1%.

• 出版日期2011-11