A contribution to the identification of the E5 defect level as tri-vacancy (V-3)

作者：Junkes Alexandra^*; Pintilie Ioana; Fretwurst Eckhart; Eckstein Doris

来源：Physica B: Condensed Matter , 2012, 407(15): 3013-3015.

DOI：10.1016/j.physb.2011.08.090

• Silicon detector
• Radiation damage
• Cluster related defect
• Neutron irradiation
• Proton irradiation
• TSC
• DLTS

Silicon particle detectors in tracking devices for the high luminosity Large Hadron Collider will suffer from an extremely intense radiation field of mainly hadronic particles. The main radiation induced deep defect centres in silicon, responsible for the increase of the dark current and corresponding noise, are the cluster related defect levels E5 and E205a. This work confirms the identification of the E5 level as tri-vacancy (V-3). This defect transforms into the tri-vacancy-oxygen complex (V3O) at temperatures above 200 degrees C. The defect concentrations were obtained by means of Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current technique (TSC) performed on float zone (FZ), epitaxially grown (Epi) and Magnetic Czochralski (MCz) silicon diodes, irradiated with 1 MeV neutrons and 23 GeV protons.

• 出版日期2012-8-1