Activation of the MoSe2 basal plane and Se-edge by B doping for enhanced hydrogen evolution

作者：Gao, Daqiang^*; Xia, Baorui; Zhu, Changrong^*; Du, Yonghua; Xi, Pinxian; Xue, Desheng; Ding, Jun^*; Wang, John

来源：Journal of Materials Chemistry A, 2018, 6(2): 510-515.

DOI：10.1039/c7ta09982g

• HIGH-PERFORMANCE ELECTROCATALYST
• REDUCED GRAPHENE OXIDE
• NANOSHEETS
• SITES
• CATALYSTS
• NANOPARTICLES
• TIO2

We demonstrate by both calculation and experiments the effective B doping-induced activation of both the basal plane and Se-edge in vertically aligned MoSe2 flakes, and the disruptive enhancement in the electrocatalytic hydrogen evolution reaction. The B doping boosts drastically the catalytic activity of MoSe2 for the hydrogen evolution reaction compared to the undoped one, characterized by a low overpotential (84 mV) and Tafel slope (39 mV s(-1)), which are comparable to those of the best Pt/C electrode. The realization of activation for both the basal plane and Se-edge by B doping in MoSe2 shows an innovative pathway towards the activity enhancement of TMDs for electrocatalysts and energy storage.

• 出版日期2018-1-14
• 单位兰州大学