科研之友
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摘要
Copper thin films were deposited on oxidized silicon at a substrate temperature of 70 degrees C and 150 degrees C using EB-PVD technique. The morphology and crystal orientation of the deposited film were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. Corrosion behavior of films was studied through electrochemical impedance spectroscopy (EIS), potentiodynamic polarization, immersion test, and cathodic chronopotentiography. Additionally, the crystalline structure of corroded samples immediately after polarization was examined by XRD. Corrosion current density for copper deposits was higher than copper sheet by polarization tests, while the data obtained by the EIS technique emphasized higher corrosion current density for copper sheet. However there was a conflict between polarization and EIS data, the other results obtained by immersion and cathodic chronopotentiography tests proved that the corrosion resistance of copper deposits was higher than copper sheet in the same alkaline media, which can be attributed to chemical composition and higher thickness of the passive layer formed on copper deposits. On the other hand, breakdown potential (E(bp)) for copper sheet was about 0.3 V(SCE), while a distinct E(bp) was not found for copper deposits. This was a sign of higher stability of the passive layer formed on copper deposits. The XRD patterns of samples immediately after polarization showed a higher content of Cu(OH)(2) on copper deposits in comparison with copper sheet. The stable morphology formed on the surface of copper after polarization was monoclinic CuO, which is assumed to have a significant effect on copper protection in alkaline media. This morphology was more compact on copper deposits in comparison with copper sheet. This was due to higher ability of deposits to react with hydroxyl ions.
- 出版日期2010-12-25
