Direct extraction of InPHBT noise parameters based on noise-figure measurement system

作者：Gao JJ^*; Li XP; Jia L; Wang H; Boeck G

来源：IEEE Transactions on Microwave Theory and Techniques, 2005, 53(1): 330-335.

DOI：10.1109/TMTT.2004.839919

• noise measurement
• noise parameter
• heterojunction bipolar transistor (HBT)
• noise model

A new method for the determination of the four noise parameters of an InP double heterojunction bipolar transistor (DHBT) based on a 50-Omega noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 20 GHz is presented and a comparison with a tuner based method is given. Good agreement is obtained between measured and calculated results up to 20 GHz for the InP/InGaAs DHBT with a 1.6 x 20 mum(2) emitter over a, wide range of bias points.

• 出版日期2005-1
• 单位北京邮电大学; 南阳理工学院