AlGaN/GaN HEMT's photoresponse to high intensity THz radiation

作者：Dyakonova N^*; But D B; Coquillat D; Knap W; Drexler C; Olbrich P; Karch J; Schafberger M; Ganichev S D; Ducournau G; Gaquiere C; Poisson M A; Delage S; Cywinski G; Skierbiszewski C

来源：Opto-electronics Review, 2015, 23(3): 195-199.

DOI：10.1515/oere-2015-0026

• terahertz
• photoresponse
• HEMT
• ALGaN/GaN

We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm(2). The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.

• 出版日期2015-9