摘要
A single poly EEPROM cell circuit sharing the deep N-well of a cell array was designed using the logic process. The proposed cell is written by the FN tunneling scheme and the cell size is 41.26 mu m(2), about 37% smaller than the conventional cell. Also, a small-area and low-power 512-bit EEPROM IP was designed using the proposed cells which was used for a 900 MHz passive UHF RFID tag chip. To secure the operation of the cell proposed with 3.3 V devices and the reliability of the used devices, an EEPROM core circuit and a DC-DC converter were proposed. Simulation results for the designed EEPROM IP based on the 0.18 mu m logic process show that the power consumptions in read mode, program mode and erase mode are 11.82, 25.15, and 24.08 mu W, respectively, and the EEPROM size is 0.12 mm(2).
- 出版日期2011-12