Low-Temperature (similar to 250 degrees C) Cu-Induced Lateral Crystallization of Amorphous Ge on Insulator

作者：Sadoh Taizoh^*; Kurosawa Masashi; Hagihara Takashi; Toko Kaoru; Miyao Masanobu

来源：Electrochemical and Solid-State Letters, 2011, 14(7): H274-H276.

DOI：10.1149/1.3582794

Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (similar to 250 degrees C) growth with a high velocity (similar to 1 mu m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.

• 出版日期2011