Manipulation of Interface Trap-Induced Generation Current by Substrate Bias in MOSFET

作者：Chen, Haifeng^*; Xie, Duan; Guo, Lixin

来源：IEEE Electron Device Letters, 2018, 39(8): 1126-1128.

DOI：10.1109/LED.2018.2845916

• Interface trap
• generation current
• substrate bias
• MOSFET

The interface trap-induced generation current I-ge in MOSFET is very weak and hard to control. In this letter, we report the anomalous variations of I-ge under the influence of substratebias V-b in MOSFET. A physical mechanism behind of these experiments is proposed for manipulating the I-ge curve by V-b. Based on this mechanism, the shift, compression, and stretch of I-ge curve can be realized.

• 出版日期2018-8
• 单位西安邮电大学