Amorphous silicon nitride thin films implanted with cerium ions for cathodoluminescent light source

作者：Chiba Akito; Tanaka Shinnosuke; Inami Wataru^*; Sugita Atsushi; Takada Kazumasa; Kawata Yoshimasa

来源：Optical Materials, 2013, 35(11): 1887-1889.

DOI：10.1016/j.optmat.2013.02.018

• Amorphous silicon nitride
• Thin film
• Cerium ion implantation
• Cathodeluminescence
• Point-like lightsource
• e-Beam assisted near-field optical microscope

Cerium ions were implanted into amorphous silicon nitride thin films, and the cathodoluminescence (CL) of the thin films was investigated. The Ce ions were distributed within a depth of around 20 nm from the surface of the amorphous silicon nitride, and they formed three kinds of cations in the thin films. By implanting the Ce ions, the CL of the films was distributed around a wavelength of 405 nm. The CL increase of more than 2.2 times compared to silicon nitride thin films Was observed at 25-kV electron beam excitation. This increase was significantly enhanced by adopting a high-temperature annealing process after the cerium-ion implantation.

• 出版日期2013-9