Promoting of charged-device model/electrostatic discharge immunity in the dicing saw process

作者：Wang Mu Chun; Liu Chuan Hsi^*; Huang Kuo Shu; Hsieh Zhen Ying; Chen Shuang Yuan; Yang Hsin Chia; Lin Chii Ruey

来源：Microelectronics Reliability, 2010, 50(6): 839-846.

DOI：10.1016/j.microrel.2010.02.018

• Complementary metal-oxide-semiconductor
• Electrostatic discharges
• Packaging
• Charged-device model
• Semiconductor-insulator

Polyimide (PI) dielectric as a heatproof material is commonly employed in the integrated circuit (IC) industry In the dicing saw assembly process, de-ionized (D.I.) water which has a higher resistance is rubbed on PI material. Hence, negative electrostatic charges are generated and accumulated on gate oxide capacitor or p-n junction capacitor in each IC chip. Since the discharge path is isolated during this time, sufficient cumulated charges through some feasible electrical path will damage the IC devices in this process step Such damaged ICs exhibit function failure A CO(2) gas flow under 2-3 kgw/cm(2) gas pressure to form a weak carbonic acid in water is efficient to conduct out the accumulated charges and adequately prevent the charge damage on IC devices. The final-test yield in sub-micron analog power complementary metal-oxide-semiconductor (CMOS) ICs was impressively increased from 80% to 98%.

• 出版日期2010-6