A New Metal-Insulator-Metal Capacitor with Nickel Fully Silicided Polycrystalline Silicon Electrodes

作者：Lee Jung Hsiang^*; Tsai Zheng Ye; Lin Yi Chang; Zhu Yi Yun; Chen Bo Han

来源：Japanese Journal of Applied Physics, 2010, 49(9): 091503.

DOI：10.1143/JJAP.49.091503

A novel low-cost metal-insulator-metal (MIM) capacitor with a high capacitance density of similar to 10.2 fF/mu m(2) has been developed by using nickel fully silicided (Ni-FUSI) polycrystalline silicon electrodes. The low resistivities of Ni(3)Si, Ni(2)Si, and NiSi electrodes have been achieved and determined to be around 106, 39, and 21 mu Omega center dot cm without requiring noble metal materials. At room temperature, this MIM capacitor also displays a good leakage current density of 3.9 x 10(-6) A/cm(2) at 1 V and a quadratic voltage coefficient (alpha) of 2266 ppm/V(2). Experiments demonstrated that Schottky emission is the dominant conduction mechanism at high temperatures and low fields under top electrode injection. The Schottky barrier heights (Phi(B)) at the Ni(3)Si/ZrO(2), Ni(2)Si/ZrO(2), and NiSi/ZrO(2) interfaces were extracted firstly to be 1.15, 1.05, and 0.8 eV, respectively. Material characterization further reveals this structure highly appropriate for advanced MIM capacitors.

• 出版日期2010