Annealing effect and photoluminescence properties in Tm+-implanted ZnO crystal

作者：Ming, Xianbing; Lu, Fei^*; Ji, Ziwu; Chen, Ming; Zhao, Jinhua; Yin, Jiaojian; Ma, Yujie

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2012, 274: 172-176.

DOI：10.1016/j.nimb.2011.11.007

• ZnO crystal
• Tm+-implanted
• Lattice damage
• Photoluminescence

ZnO crystals were implanted by Tm+ ions at 500 keV with different doses at room temperature. The lattice damage tends to saturate at dose higher than 3 x 10(15) ions cm(-2), indicating a strong irradiation resistance of ZnO. Post-implant annealing at temperature from 800 to 1050 degrees C is performed to activate Tm ion optically. Annealing higher than 950 degrees C resulted in out-diffusion of Tm ions. Photoluminescence was measured at room temperature with UV and green excitation, luminescence of transition H-3(4) -> H-3(6) from Tm3+ and concentration quenching behavior is observed in samples suffering 800 degrees C annealing for 30 min. Typical emission bands from ZnO crystal are detected in both virgin and the implanted samples. The results show that the implanted Tm+ seems serving as deep traps to contribute to the red band emission.

• 出版日期2012-3-1
• 单位山东建筑大学; 山东大学