Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

作者：Lim Taekyung; Kim Dongchool; Ju Sanghyun^*

来源：Applied Physics Letters, 2013, 103(1): 013107.

DOI：10.1063/1.4813016

Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al2O3) on a graphene channel through nitrogen plasma treatment. The deposited Al2O3 thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al2O3 as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics.

• 出版日期2013-7-1