Adaptively-biased MOSFET for low voltage CMOS analog circuits

作者：Sato Hiroki^*; Takagi Shigetaka

来源：Analog Integrated Circuits and Signal Processing, 2012, 72(3): 557-563.

DOI：10.1007/s10470-011-9671-0

• MOSFET
• Triode region
• Saturation region
• Adaptively biasing
• CMOS analog circuit
• Low voltage

This paper proposes technique for mitigating an issue of %26quot;reduced signal voltage range%26quot; in existing analog signal processing circuits in finer technologies due to their low supply voltage. The proposed adaptively-biased MOSFET pair can make an MOSFET operate in the saturation or the triode region in a wider voltage range. The simulated results of a source-coupled pair with the proposed structure by using Cadence Spectre and MOSFET parameter of a 0.18 mu m CMOS technology are also presented.

• 出版日期2012-9