Advanced CAD tool for noise modeling of RF/microwave field effect transistors with large gate widths

作者：Asadi S^*; Yagoub M C E

来源：Analog Integrated Circuits and Signal Processing, 2011, 67(3): 353-363.

DOI：10.1007/s10470-011-9613-x

• CAD
• Coupling
• FET
• Noise
• Wave effects
• Width

In the millimeter-wave frequency range, electromagnetic (EM) effects can significantly influence a device behavior. As the core of modern communication systems, active devices such as field effect transistors (FETs) require up-to-date models to accurately integrate such effects, especially in terms of noise performance since most of communication systems operate in noisy environments. Furthermore, to keep low-noise amplification over a wide frequency band, the transistor noise resistance R(n) must be substantially reduced to make the system insensitive to impedance matching. Since this can be realized through large gate-width devices, a novel large gate-width FET noise model is proposed which efficiently integrates EM wave propagation effects, one of the most important EM effects in mm-wave frequencies.

• 出版日期2011-6