A novel double-recessed 4H-SiC MESFET with partly undoped space region

作者：Orouji Ali A^*; Aminbeidokhti Amirhossein

来源：Superlattices and Microstructures, 2011, 50(6): 680-690.

DOI：10.1016/j.spmi.2011.09.009

• MESFET
• Undoped space region
• Breakdown voltage
• Maximum oscillation frequency

In this paper, a novel double-recessed 4H-SiC metal semiconductor field effect transistor (MESFET) with partly undoped space region (DRUS-MESFET) is introduced. The key idea in this work is to improve the DC and RF characteristics of the device by introducing an undoped space region. Using two-dimensional and two-carrier device simulation, we demonstrate that breakdown voltage (V-BR) increases from 109 V in conventional double recessed MESFET (DR-MESFET) structure to 144.5 V in the DRUS-MESFET structure due to the modified channel electric field distribution of the proposed structure. The maximum output power density of the DRUS-MESFET structure is about 25.4% larger than that of the DR-MESFET structure. Furthermore, lower gate-drain capacitance (C-GD), higher cut-off frequency (f(T)), larger maximum available gain (MAG), and higher maximum oscillation frequency (f(max)) are achieved for the DRUS-MESFET structure. The results show that the f(max) and f(T) of the proposed structure improve 95.6% and 13.07% respectively, compared with that of the DR-MESFET structure. Also, the MAG of the DRUS-MESET is 4.5 dB higher than that of the DR-MESFET structure at 40 GHz. The results show that the DRUS-MESFET structure has superior electrical characteristics and performances in comparison with the DR-MESFET structure.

• 出版日期2011-12