Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling

作者：Rozhavskaya M M; Lundin W V; Troshkov S I; Tsatsulnikov A F; Dubrovskii V G^*

来源：Physica Status Solidi A-Applications and Materials Science, 2015, 212(4): 851-854.

DOI：10.1002/pssa.201431912

• diffusion lengths
• Ga adatoms
• GaN stripes
• growth models

We present a method for determining the diffusion lengths of Ga adatoms on GaN by combining profiling of the tops of GaN stripes obtained by selective area MOCVD and a diffusion growth model. We deduce very high values of the diffusion lengths on tops of < 11-20 >-oriented stripes at 1040 degrees C which range from 6 mu m under nitrogen-rich to 24m under hydrogen-rich atmosphere in the reactor. The obtained results show in particular that Ga-catalyzed growth of GaN nanostructures and nanowires should not be limited by Ga influx and thus the exceptional growth rate is anticipated in such cases.

• 出版日期2015-4