The charge generation layer incorporating two p-doped hole transport layers for improving the performance of tandem organic light emitting diodes

作者：Qin, Dashan^*; Wang, Mingxia; Chen, Yuhuan; Chen, Lei; Li, Guifang; Wang, Wenbo

来源：The European Physical Journal - Applied Physics, 2014, 67(3): 30201.

DOI：10.1051/epjap/2014130545

• TRANSITION-METAL OXIDES
• MOLYBDENUM TRIOXIDE
• DEVICES
• ELECTRON

We report the charge generation layer (CGL) structure comprising of Li2CO3 doped bathocuproine (BCP:Li2CO3)/MoO3 doped 4,4-N, N-bis [N-1-naphthyl-N-phenyl-amino] biphenyl (NPB:MoO3)/MoO3 doped 4,4'-N,N'-dicarbazole-biphenyl (CBP:MoO3) for tandem organic light emitting diodes (TOLEDs). Compared to the TOLED using the conventional CGL structure of BCP:Li2CO3/20 nm CBP:MoO3, the one using the CGL structure of BCP: Li2CO3/5 nm NPB:MoO3/15 nm CBP:MoO3 showed increased electrical and luminous properties, mostly because the introduction of the higher-conductivity NPB:MoO3 relative to CBP:MoO3 could improve the current conduction in the CGL structure. Whereas, the performance of the CGL structure of BCP:Li2CO3/x nm NPB:MoO3/20-x nm CBP:MoO3 decreased with x increasing, mostly due to the fact that the CBP:MoO3 became depleted of mobile holes upon contacting p-doped NPB: the smaller thickness of CBP:MoO3, the worse conductivity for it. We provide some in-depth insights on designing the high-performance CGLs for TOLEDs.

• 出版日期2014-9
• 单位河北工业大学