A novel power-clamp assisted complementary MOSFET for robust ESD protection

作者：Wu, Jian; Dong, Shurong^*; Li, Mingliang; Miao, Meng; Ma, Fei; Zheng, Jianfeng; Han, Yan

来源：Microelectronics Reliability, 2012, 52(8): 1593-1597.

DOI：10.1016/j.microrel.2011.10.013

• SUBSTRATE-TRIGGERED TECHNIQUE
• NMOS
• DESIGN

A novel power-clamp assisted complementary MOSFET (PCACMOS), modified from traditional gate-coupled complementary MOSFET (GCCMOS), is proposed for high robust ESD (Electrostatic discharge) protection application. The power-clamp achieves by RC-NMOS and designs by Spice simulation. The comprehensive performance of the protection schemes are evaluated by the figure of merit (FOM). Compared with traditional gate-coupled MOSFET (GCCMOS) protection scheme, the power-clamp assisted complementary MOSFET (PCACMOS) protection scheme has a similar turn-on speed but higher FOM.

• 出版日期2012-8
• 单位浙江大学