HfO2-TiO2 Ultra-Thin Gate Dielectric by RF Sputtering

作者：Li G X; Chen X F^*; Ren W; Shi P; Wu X Q; Tan O K; Zhu W G; Yao X

来源：Ferroelectrics, 2011, 410: 129-136.

DOI：10.1080/00150193.2010.492737

• High-K gate dielectrics
• sputtering
• HfTiO4 thin films

High-K HfO2-TiO2 ultra-thin films with sub-nanometer laminate HfO2/TiO2 stacks were deposited on p-type (100) silicon wafer using magnetron sputtering at 300 degrees C. The as-deposited films are amorphous which could be sustained up to 900 degrees C in air. The off-stoichiometric films show further improved thermal stability due to obstacled crystallization process. It is revealed that Hf-rich films trends to form thicker interfacial layer due to the stability of HfO2, whereas Ti-rich films usually demonstrate higher leakage current owing to the low band gap of TiO2. In this work, 20-nm-thick films with Hf/Ti ratio of 46/54 demonstrates higher permittivity up to 50 with low leakage current 1.2 x 10(-8) A/cm(2) at 1 V.

• 出版日期2011
• 单位南阳理工学院; 西安交通大学