A comparative study of self-heating effect of nMOSFETs fabricated on SGOI and SGSOAN substrates

作者：Liu, Hongxia^*; Li, Bin; Li, Jin; Yuan, Bo

来源：Microelectronics Reliability, 2010, 50(12): 1942-1950.

DOI：10.1016/j.microrel.2010.05.013

• STRAINED-SI
• MOBILITY MODEL
• SIMULATION
• MOSFETS
• INSULATOR
• ELECTRON
• TRANSPORT
• STATE
• HOLE

In this work, for the first time, the electrical and thermal characteristics of strained Si/SiGe nanoscale n type metal-oxide-silicon field-effect transistors (MOSFETs) with silicon-on-aluminum nitride (SOAN) substrate are investigated by ISE TCAD. This novel structure is named as SGSOAN nMOSFET. A comparative study of self-heating effect (SHE) of nMOSFETs fabricated on SGOI and SGSOAN are presented in this paper. Numerical study results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for SGOI to work at high temperature.

• 出版日期2010-12
• 单位西安电子科技大学