A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

作者：Nagase Koichi^*; Wada Takehiko; Ikeda Hirokazu; Arai Yasuo; Ohno Morifumi; Hanaoka Misaki; Kanada Hidehiro; Oyabu Shinki; Hattori Yasuki; Ukai Sota; Suzuki Toyoaki; Watanabe Kentaroh; Baba Shunsuke; Kochi Chihiro; Yamamoto Keita

来源：Journal of Low Temperature Physics, 2016, 184(1-2): 449-453.

DOI：10.1007/s10909-016-1551-7

• Low temperature electronics
• FD-SOI CMOS
• Ge BIB detector

We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to 200 m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

• 出版日期2016-7