作者：Muhieddine Khalid; Ullah Mujeeb; Maasoumi Fatemeh; Burn Paul L; Namdas Ebinazar B
来源：Advanced Materials, 2015, 27(42): 6677-+.
DOI：10.1002/adma.201502554
摘要
Area emission is realized in all-solution-processed hybrid light-emitting transistors (HLETs). A new HLET design is presented with increased aperture ratio, and optical and electrical characteristics are shown.
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