A 3T1R Nonvolatile TCAM Using MLC ReRAM for Frequent-Off Instant-On Filters in IoT and Big-Data Processing

作者：Chang Meng Fan^*; Lin Chien Chen; Lee Albert; Chiang Yen Ning; Kuo Chia Chen; Yang Geng Hau; Tsai Hsiang Jen; Chen Tien Fu; Sheu Shyh Shyuan

来源：IEEE Journal of Solid-State Circuits, 2017, 52(6): 1664-1679.

DOI：10.1109/JSSC.2017.2681458

• Nonvolatile memory (NVM)
• nonvolatile ternary content-addressable-memory (nvTCAM)
• resistive RAM (ReRAM)
• TCAM

Existing nonvolatile ternary content-addressable-memory (nvTCAM) suffers from limited word-length (WDL), large write-energy (E-W) and search-energy (E-S), and large cell area (A). This paper develops a 3T1R nvTCAM cell using a single multiple-level cell (MLC)-resistive RAM (ReRAM) device to achieve long WDL, lower E-W and E-S, and reduced cell area. Two peripheral control schemes were developed, dual-replica-row self-timed and invalid-entry power consumption suppression (IEPCS), for the suppression of dc current in 3T1R nvTCAM cells in order to reduce E-S. Two versions of the IEPCS scheme were developed (basic and charge-recycle-controlled) to alter the tradeoff between area overhead and power consumption in the updating of invalid-bits. A 128 b x 64 b 3T1R nvTCAM macro was fabricated using back-end-of-line ReRAM under 90-nm CMOS process. The fabricated MLC-based 3T1R nvTCAM macro achieved sub-1-ns search-delay and sub-6-ns wake-up time with supply voltage of 1 V and WDL = 64 b.

• 出版日期2017-6
• 单位清华大学