Uniform Strain in Heterostructure Tunnel Field-Effect Transistors

作者：Verreck Devin; Verhulst Anne S; Van de Put Maarten L; Soree Bart; Collaert Nadine; Mocuta Anda; Thean Aaron; Groeseneken Guido

来源：IEEE Electron Device Letters, 2016, 37(3): 337-340.

DOI：10.1109/LED.2016.2519681

• TFET
• strain
• heterostructure

Strain can strongly impact the performance of III-V tunnel field-effect transistors (TFETs). However, previous studies on homostructure TFETs have found an increase in ON-current to be accompanied with a degradation of subthreshold swing. We perform 30-band quantum mechanical simulations of staggered heterostructure p-n-i-n TFETs submitted to uniaxial and biaxial uniform stress and find the origin of the subthreshold degradation to be a reduction of the density of states in the strained case. We apply an alternative configuration including a lowly doped pocket in the source, which allows to take full benefit of the strain-induced increase in ON-current.

• 出版日期2016-3