Dependence of nickel gettering on crystalline nature in as-grown Czochralski silicon wafer

作者：Lee In Ji; Paik Ungyu; Park Jea Gun^*

来源：Journal of Crystal Growth, 2013, 365: 6-10.

DOI：10.1016/j.jcrysgro.2012.12.033

• Defects
• Impurities
• Point defects
• Czochralski method
• Single crystal growth
• Semiconducting silicon

The efficiency of nickel gettering in vacancy- and interstitial-silicon-dominant crystalline nature was studied using wafers cut along the axial direction of a CZ-grown silicon ingot grown with a variable v/G ratio. Six crystalline areas (V-rich, P-band, P-v, P-I, B-band, and l-rich) were present within one wafer. Nickel gettering efficiency was estimated before and after a typical NAND-flash-memory heat-treatment. With as-grown CZ silicon wafers, nickel gettering depends on the crystalline nature, i.e., nickel atoms are mainly gathered at oxygen precipitates in bulk at vacancy-dominant crystalline regions and at the surface of pure silicon in the interstitial-silicon-dominant crystal region (P-I). Rapid thermal annealing of a CZ silicon wafer at 1175 degrees C for 10 s in Ar/NH3 mixture ambient completely erased the dependency of nickel gettering on the crystalline nature and demonstrated an excellent getting ability for nickel contamination via the relaxation gettering of oxygen precipitates.

• 出版日期2013-2-15