Ag/Au diffusion wafer bonding for thin-GaN LED fabrication

作者：Chang C L^*; Chuang Y C; Liu C Y

来源：Electrochemical and Solid-State Letters, 2007, 10(11): H344-H346.

DOI：10.1149/1.2777875

In this study we successfully demonstrate a method for Ag/Au diffusion wafer bonding. We were able to achieve a high-meltingpoint bonding interface at a relatively low bonding temperature of 150 C. The Ag/Au interdiffusion coefficient is defined against the Au content. Au atoms have a faster diffusion rate in the Ag matrix layer, which causes the Ag/Au interface to move toward the Au side over time. The use of this method of Ag/Au diffusion bonding makes the fabrication of high-power thin-GaN light-emitting diode chips on Si wafers a feasible possibility.

• 出版日期2007
• 单位中央民族大学