科研之友
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摘要
A new direct extraction method for the determination of the parasitic capacitances of PHEMTs is presented in this paper. This method is based on a general scalable small signal equivalent circuit model under pinch-off bias condition. The main advantage of this approach is that all parasitic capacitances including C-pg, C-pd and C-pgd can be extracted simultaneously by using PHEMTs of different sizes but with the same pad structure. Good agreement is obtained between modelled and measured results for 2 x 20 mu m, 2 x 40 mu m, 2 x 60 mu m and 2 x 100 mu m gate width (number of gate fingers x unit gate width) double heterojunction delta-doped PHEMTs.
