科研之友
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摘要
Temperature dependence of resistivity from 250 to 900K in p-type 4H-SiC with various doping concentrations (5.8 x 10(14)-7.1 x 10(18)cm(-3)) was presented. The resistivity was obtained by the van der Pauw method in samples, whose doping concentrations were precisely determined in our previous work. From the experimental results, coefficients for a fitting formula with polynomial approximation were derived. We confirmed that the fitting formula can accurately estimate the resistivity of p-type SiC with wide-range doping concentrations.
- 出版日期2018-8
