An interface clusters mixture model for the structure of amorphous silicon monoxide (SiO)

作者：Hohl A; Wieder T^*; van Aken PA; Weirich TE; Denninger G; Vidal M; Oswald S; Deneke C; Mayer J; Fuess H

来源：Journal of Non-Crystalline Solids, 2003, 320(1-3): 255-280.

DOI：10.1016/S0022-3093(03)00031-0

The present state of research on the structure of amorphous silicon monoxide (SiO) is reviewed. The black, coal-like modification of bulk SiO is studied by a combination of diffraction, microscopy, spectroscopy, and magnetometry methods. Partial radial distribution functions of SiO are obtained by X-ray, neutron and electron diffraction. Disproportionation of SiO into Si and SiO, is verified. High resolution TEM gives an upper limit of less than 2 nm for the typical Si cluster size. The Si K-edge electron energy-loss near-edge structure (ELNES) data of SiO are interpreted in terms of the oxidation states Si4+ and Si-0. X-ray photoelectron spectroscopy gives first details about possible stoichiometric inhomogeneities related to internal interfaces, The wipe-out effect in the Si-29 MAS NMR signal of SiO is confirmed experimentally. The new estimation of the wipe-out radius is about 1.1 nm. First-time W-band, Q-band, and X-band ESR and SQUID measurements indicate an interfacial defect structure. Frequency distributions of atomic nearest-neighbours are derived. The interface clusters mixture model (ICM model) suggested here describes the SiO structure as a disproportionation in the initial state. The model implies clusters of silicon dioxide and clusters of silicon surrounded by a sub-oxide matrix that is comparable to the well-known thin Si/SiO2 interface and significant in the volume because of small cluster sizes.

• 出版日期2003-6-1