A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy

作者：Gacevic Z^*; Gomez V J; Garcia Lepetit N; Soto Rodriguez P E D; Bengoechea A; Fernandez Garrido S; Noetzel R; Calleja E

来源：Journal of Crystal Growth, 2013, 364: 123-127.

DOI：10.1016/j.jcrysgro.2012.11.031

• Composition
• Growth diagram
• Strain
• Surface morphology
• Molecular beam
• InGaN

The composition, strain and surface morphology of (0001)InGaN layers are investigated as a function of growth temperature (460-645 degrees C) and impinging In flux. Three different growth regimes: nitrogen-rich, metal-rich and intermediate metal-rich, are clearly identified and found to be in correlation with surface morphology and strain relaxation. Best epilayers%26apos; quality is obtained when growing under intermediate metal-rich conditions, with 1-2 monolayers thick In ad-coverage. For a given In flux, the In incorporation decreases with increasing growth temperature due to InN thermal decomposition that follows an Arrhenius behavior with 1.84 +/- 0.12 eV activation energy.

• 出版日期2013-2-1