摘要

Co40Fe40B20/SiO2/Si structures fabricated by a facing-target sputtering method exhibit anomalous Hall effect. The longitudinal resistance shows a metal-insulator transition with the increase of temperature. The Hall resistance first increases, and then decreases with the increase of temperature. The character of Hall loops undergoes a crossover from AHE to ordinary Hall effect with the increase of temperature. Such electronic transport properties can be understood by a two current channels model. On the other hand, the critical saturated magnetic field of Hall loops drops rapidly at 350 K, which can be attributed to the reduction of spin-polarized carriers in Co40Fe40B20.

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