Anti-charging process for electron beam observation and lithography

作者：Aassime A^*; Hamouda F; Richardt I; Bayle F; Pillard V; Lecoeur P; Aubert P; Bouchier D

来源：Microelectronic Engineering, 2013, 110: 320-323.

DOI：10.1016/j.mee.2013.02.036

• Charging effects
• Electron beam lithography
• Scanning electron microscopy
• Insulating materials
• Bi-layer

Electron beam (e-beam) exposure of insulating material gives rise to charge accumulation which degrades pattern resolution and position during lithography and observation. In this paper we propose a process which reduces significantly the artifacts due to charging effects by using a charge dissipater based on a bi-layer deposited on top of the insulating substrate. The first layer is an inorganic thin film and soluble in water at room temperature, while the second layer is a metallic thin film. We reported the results of this process during e-beam lithography and observation of insulating samples.

• 出版日期2013-10