科研之友
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摘要
In this paper, an efficient numerical simulation method, which combines the spline alternating direction implicit (SADI) method and the high-order compact (HOC) finite difference method, is presented to simulate the potential and electric field distributions along the semiconductor surface of thin film silicon-on-insulator (TFSOI) reduced surface field (RESURF) devices. The relative merit of HOC-SADI is compared with three other popular numerical simulation methods, Newton, Gummel and CGS. The numerical results obtained from the proposed scheme are compared to the simulator MEDICI. HOC-SADI is a faster algorithm than Newton, Gummel and CGS as is evident from the CPU times and the number of iterations.
